Symmetric Gain Optoelectronic Mixers for Ladar
نویسندگان
چکیده
We are developing a symmetric gain optoelectronic mixer for chirped-AM laser detection and ranging systems (LADAR) operating in the “eye-safe” 1.55 m wavelength range. Signal processing of a chirped-AM LADAR system is simplified if the photodetector in the receiver is used as an optoelectronic mixer (OEM). Adding gain to the optoelectronic mixer allows the following transimpedance amplifier’s gain to be reduced, increasing bandwidth and improving the system’s noise performance. The symmetric gain optoelectronic mixer is based on a symmetric heterojunction phototransistor. The base layer is In0.53Ga0.47As (InGaAs), and the emitter/ collector layer is In0.48Al0.52As (InAlAs). Two dimensional simulations of the devices were carried out to analyze device performance. Two sample heterostructures were grown using molecular beam epitaxy. We are currently in the prototype development stage. Simulation results and preliminary results from the initial batch of devices are presented. These symmetric gain optoelectronic mixer devices can lead to miniaturized LADAR-on-chip system. Such a system will have many military and civilian applications, such as range finding, terrain mapping, reconnaissance, and face recognition.
منابع مشابه
Design and analysis of In0.53Ga0.47As/InP symmetric gain optoelectronic mixers
A symmetric gain optoelectronic mixer based on an indium gallium arsenide (In0.53Ga0.47As)/indium phosphide (InP) symmetric heterojunction phototransistor structure is being investigated for chirpedAM laser detection and ranging (LADAR) systems operating in the ‘‘eye-safe” 1.55 lm wavelength range. Signal processing of a chirped-AM LADAR system is simplified if the photodetector in the receiver...
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